WSJM65R170W

WSJM65R170W is a high voltage N-channel MOSFET in TO247 package, which utilizes the advanced super-junction technology to provide superior FOM RDS(on) * Qg among silicon based MOSFETs. It is particularly suitable for applications require extreme high efficiency and power density

Features and Benefits
  • Superior FOM RDS(on) * Qg
  • Extremely low switching loss
  • 100% avalanche tested
Applications
  • High efficiency power supplies
Parametric
Package
Quality, reliability & chemical content
Ordering

 

Type Number Symbol Parameter Conditions Min Typ Max Unit
WSJM65R170W VDS  drain-source voltage       650 V
VGS  gate-source voltage       ±30 V
ID  continuous drain current  Tmb = 25 °C     23 A
Ptot  power dissipation  Tmb = 25 °C     240 W
Tj  junction temperature   -55   150 °C
RDS(on)  drain-source on-state resistance  VGS = 10 V; ID = 11 A   156 170
QG(tot)  total gate charge  ID = 11 A; VDS = 400 V; VGS = 10 V   38   nC
EOSS  coss stored erergy  VGS = 0 V; VDS = 0 to 400 V   5.1   μJ
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WSJM65R170W

TO247

HORIZONTAL, RAIL PACK Volume production Standard Marking WSJM65R170WQ 9340 740 24127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WSJM65R170W 9340 740 24127 WSJM65R170WQ NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WSJM65R170W WSJM65R170WQ WSJM65R170W Leaded  D always Pb-free   1

Chemical Content - WSJM65R170W

 

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