NXPSC10650B

Silicon Carbide Schottky diode in a TO263 (D2PAK) plastic package, designed for high frequency switched-mode power supplies

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
Applications
  • Power factor correction
  • Telecom/Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED/OLED TV
  • Motor Drives
@ IF
Datasheet
Package version
Package name
Product status
IF(AV) [max]
Tj [max]
VRRM [max]
Product Parametric
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
NXPSC10650B VRRM repetitive peak reverse voltagev   - - 650 V
IF(AV) average forward current δ = 0.5 ; Tmb ≤ 113 °C; square-wave pulse - - 10 A
Tj junction temperature   - - 175 °C
VF forward voltage IF = 10 A; Tj = 25 °C; - 1.5 1.7 V
Qr recovered charge IF = 10 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; - 15 - nC
Package
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
NXPSC10650B TO263
TO263
REEL 13\" Q1/T1 Volume production Standard Marking NXPSC10650BJ 9340 700 05118
Quality, reliability & chemical content
Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
NXPSC10650B NXPSC10650BJ   NXPSC10650B LeadedH   1 1
Ordering & availability
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
NXPSC10650B 9340 700 05118 NXPSC10650BJ NA NA  
Qr [typ]
VF [typ] @ Tj = 25 °C
Cross Reference
C3D10060G IDK09G65C5 IDK10G65C5 SCS210AJ SCS210AJHR STPSC1006G-TR STPSC10065GY-TR STPSC10H065GY -TR STPSC10H065G-TR STPSC10H065GY-TR
Orderable part number
NXPSC10650BJ

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