BTA308S-800ET

Planar passivated high commutation three quadrant triac in a TO252 (DPAK) surface mountable plastic package. This triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. This "series ET" triac will commutate the full rated RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber.

Features and Benefits
• High voltage capability
• High commutation capability with maximum false trigger immunity
• Direct interfacing with low level power drivers and logic ICs
• High junction operating temperature capability (Tj(max) = 150 °C)
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
• Sensitive gate for easy logic level triggering
• Surface mountable package
Applications
• Compressor starting control circuits
• General purpose motor controls
• Reversing induction motor controls e.g. vertical axis washing machines
• Applications subject to high temperature (Tj(max) = 150 °C)
Datasheet
Package version
Package name
Product status
Tj [max]
Product Parametric
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA308S-800ET VDRM repetitive peak offstate voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 131 °C; Fig. 1; Fig. 2; Fig. 3     8 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5     60 A
non-repetitive peak forward current full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     65 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7     10 mA
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7     10 mA
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7     10 mA
VT on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10   1.3 1.65 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 400     V/μs
VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 200     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 8 A; dVcom/dt = 20 V/μs; snubberless condition; gate open circuit; Fig. 12 3     A/ms
Package
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BTA308S-800ET TO252.jpg
TO252
REEL 13\" Q1/T1 Volume production Standard Marking BTA308S-800ETJ 9340 720 24118
Quality, reliability & chemical content
Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BTA308S-800ET BTA308S-800ETJ   BTA308S-800ET LeadedH   1 1
Ordering & availability
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BTA308S-800ET 9340 720 24118 BTA308S-800ETJ NA NA  
IGT [max] in quadrant 1
IGT [max] in quadrant 2
IGT [max] in quadrant 3
IT(RMS) [max]
ITSM [max] @ 50 Hz
VDRM [max]
Cross Reference
BCR5AS-12B T810-600B T810-800B T835-800B
Orderable part number
BTA308S-800ETJ

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