WNSC2D201200W-B

Silicon Carbide Schottky diode in a TO247-2L plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
  • High junction operating temperature capability (Tj(max) = 175 °C)
Applications
  • Power factor correction
  • Telecom / Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED / OLED TV
  • Motor Drives

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2D201200W-B VRRM  repetitive peak reverse voltage       1200 V
IF(AV)  average forward current  δ = 0.5; square-wave pulse; Tmb ≤ 112 °C     20 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 20 A; Tj = 25 °C   1.54 1.75 V
Qr  reverse charge  IF = 20 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C   36   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2D201200W-B

TO247-2L

HORIZONTAL, RAIL PACK Volume production Standard Marking WNSC2D201200W-B6Q 9340 733 88127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2D201200W-B 9340 733 88127 WNSC2D201200W-B6Q NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2D201200W-B WNSC2D201200W-B6Q WNSC2D201200W-B Leaded  D Always Pb-free 1 1

Chemical Content - WNSC2D201200W-B

Disclaimer

All information in this document is furnished for exploratory or indicative purposes only. All information in this document is believed to be accurate and reliable. However, WeEn Semiconductors does not give any representations or warranties as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. WeEn Semiconductors may make changes to information published in this document at any time and without notice. Minor deviations may occur in the products from different manufacturing location. This document supersedes and replaces all information supplied prior to the publication hereof. Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.