WNSC04650T

Silicon Carbide Schottky diode in a DFN 8*8 plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
Applications

 

  • Power factor correction
  • Telecom/Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED/OLED TV
  • Motor Drives

 

@ IF
Datasheet
Package version
Package name
Product status
IF(AV) [max]
Tj [max]
VRRM [max]
Product Parametric
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC04650T VRRM repetitive peak reverse voltage       650 V
IF(AV) average forward current δ = 0.5 ; square-wave pulse; Tc ≤ 150 °C;     4 A
Tj junction temperature       175 °C
VF forward voltage IF = 4 A; Tj = 25 °C;   1.5 1.7 V
Qr recovered charge IF = 4 A; VR = 400 V; dIF/dt = 500 A/μs; Tj = 25 °C;         7   nC
Package
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC04650T

DFN8X8.jpg

DFN8X8

STANDARD MARK SMD Volume production Standard Marking WNSC04650T6J 9340 721 57118
Quality, reliability & chemical content
Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC04650T WNSC04650T6J WNSC04650T icon_rohs_pb.png icon_rhf_darkgreen.png Always Pb-free 1 1
Ordering & availability
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC04650T 9340 721 57118 WNSC04650T6J NA NA  
category
Qr [typ]
VF [typ] @ Tj = 25 °C
Cross Reference
STPSC4H065DLF
Orderable part number
WNSC04650T6J

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