BT258U-600R

Passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Features and Benefits
  • Sensitive gate suitable for logic level controls
Applications
  • General purpose switching
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BT258U-600R VDRM repetitive peak off-state voltage       600 V
VRRM repetitive peak reverse voltage       600 V
IT(AV) average on-state current half sine wave; Tmb ≤ 111 °C     5 A
IT(RMS) RMS on-state current half sine wave; Tmb ≤ 111 °C     8 A
ITSM non-repetitive peak on-state current half sine wave; Tj(init) = 25 °C; tp = 10 ms     75 A
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms     82 A
Tj junction temperature       125 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; Tj = 25 °C   50 200 µA
IL latching current VD = 12 V; IG = 0.1 A; Tj = 25 °C   0.4 10 mA
IH holding current VD = 12 V; Tj = 25 °C   0.3 6 mA
dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 °C; RGK = 100 μ; (VDM = 67% of VDRM); exponential waveform 50 100   V/µs
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BT258U-600R TO251.jpg
TO251
Horizontal, Rail Pack Volume production Standard Marking BT258U-600R,127 9340 555 61127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BT258U-600R 9340 555 61127 BT258U-600R,127 NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BT258U-600R BT258U-600R,127   BT258U-600R Leaded H   NA NA

Chemical Content - BT258U-600R

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Disclaimer

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