WNSC2D301200CW

Dual Silicon Carbide Schottky diode in a TO247-3L plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
  • High junction operating temperature capability (Tj(max) = 175 °C)
Applications
  • Power factor correction
  • Telecom / Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED / OLED TV
  • Motor Drives

 

Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
WNSC2D301200CW VRRM  repetitive peak reverse voltage       1200 V
IO(AV)  limiting average forward current  δ = 0.5; Tmb ≤ 126 °C; square-wave pulse; both diodes conducting     30 A
Tj  junction temperature   -55   175 °C
VF  forward voltage  IF = 15 A; Tj = 25 °C; per diode   1.42 1.60 V
Qr  reverse charge  IF = 15 A; VR = 400 V; dIF/dt = 500 A/µs; Tj = 25 °C; per diode   36   nC
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
WNSC2D301200CW

TO247

HORIZONTAL, RAIL PACKVolume productionStandard MarkingWNSC2D301200CW6Q9340 729 12127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
WNSC2D301200CW9340 729 12127WNSC2D301200CW6QNANA

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
WNSC2D301200CWWNSC2D301200CW6QWNSC2D301200CWLeaded  DAlways Pb-free

Chemical Content - WNSC2D301200CW

Disclaimer

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