BYV32E-200P

Dual ultrafast power diode in a SOT78 (TO-220AB) plastic package

Features and Benefits
  • Ultra low leakage current
  • High junction temperature up to 175 °C
  • Low on-state loss
  • Fast switching
  • Soft recovery characteristic minimizes power consuming oscillations
  • High reverse surge capability
  • High thermal cycling performance
  • Low thermal resistance
Applications
  • Home appliance power supply
Parametric
Package
Quality, reliability & chemical content
Ordering
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BYV32E-200P VRRM repetitive peak reverse voltage       200 V
IF(AV) average forward current δ = 0.5  ; Tmb ≤ 149 °C; Square-ware pulse     10 A
IO(AV) average output current δ = 0.5  ; Tmb ≤ 149 °C; Square-ware pulse     20 A
IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; SIN; per diode     125 A
tp = 8.3 ms; Tj(init) = 25 °C; SIN; per diode     137 A
VESD electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kμ; all pins     8 kV
VF forward voltage IF = 20 A; Tj = 25 °C   1.06 1.15 V
IF = 8 A; Tj = 150 °C   0.76 0.85 V
IF = 10 A; Tj = 25 °C   0.95   V
trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C   18 25 ns
Type number Package Packing Product status Marking Orderable part number Ordering code (12NC)
BYV32E-200P TO220.jpg
TO220
Horizontal, Rail Pack Volume production Standard Marking BYV32E-200PQ 9340 695 27127
Datasheet
Type number Ordering code (12NC) Orderable part number Region Distributor Order sample
BYV32E-200P 9340 695 27127 BYV32E-200PQ NA NA  

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Chemical content Orderable part number Type number RoHS / RHF Leadfree conversion date MSL MSL LF
BYV32E-200P BYV32E-200PQ   BYV32E-200P Leaded H   NA NA

Chemical Content - BYV32E-200P

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Disclaimer

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